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M12L128168A-7BVAG2N Datasheet

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)
M12L128168A-7BVAG2N datasheet preview

M12L128168A-7BVAG2N Details

Part number M12L128168A-7BVAG2N
Datasheet M12L128168A-7BVAG2N M12L128168A-5TVG2N Datasheet (PDF)
File Size 1.26 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description Synchronous DRAM
M12L128168A-7BVAG2N page 2 M12L128168A-7BVAG2N page 3

M12L128168A-7BVAG2N Overview

The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance...

M12L128168A-7BVAG2N Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
  • CAS Latency ( 2 & 3 )
  • Burst Length ( 1, 2, 4, 8 & full page )
  • Burst Type ( Sequential & Interleave )
  • All inputs are sampled at the positive going edge of the system clock
  • Burst Read single write operation
  • DQM for masking

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