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M12L128168A-7BVG2N - Synchronous DRAM

Download the M12L128168A-7BVG2N datasheet PDF. This datasheet also covers the M12L128168A-5TVG2N variant, as both devices belong to the same synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read single write operation.
  • DQM for masking.
  • Auto & self refresh (self refresh is not supported for VA grade).
  • Refresh - 64ms refresh.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M12L128168A-5TVG2N-ESMT.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for M12L128168A-7BVG2N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M12L128168A-7BVG2N. For precise diagrams, and layout, please refer to the original PDF.

ESMT SDRAM FEATURES  JEDEC standard 3.3V power supply  LVTTL compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Late...

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Four banks operation  MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave )  All inputs are sampled at the positive going edge of the system clock  Burst Read single write operation  DQM for masking  Auto & self refresh (self refresh is not supported for VA grade)  Refresh - 64ms refresh period (4K cycle) for V grade - 16ms refresh period (4K cycle) for VA grade M12L128168A (2N) Automotive Grade 2M x 16 Bit x 4 Banks Synchronous DRAM GENERAL DESCRIPTION The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM o

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L128168A-7BVG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7BVAG2N Synchronous DRAM
M12L128168A-7BVAG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7BG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7TG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7TG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7TG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-7TVAG2N Synchronous DRAM