Part M12L128168A-7BVG2S
Description 2M x 16 Bit x 4 Banks Synchronous DRAM
Manufacturer Elite Semiconductor Microelectronics Technology
Size 1.02 MB
Elite Semiconductor Microelectronics Technology
M12L128168A-7BVG2S

Overview

The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

  • JEDEC standard 3.3V power supply
  • LVTTL compatible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave )
  • All inputs are sampled at the positive going edge of the system clock
  • Burst Read single write operation
  • DQM for masking
  • Auto & self refresh (self refresh is not supported for VA grade)
  • Refresh - 64 ms refresh period (4K cycle) for V grade -16 ms refresh period (4K cycle) for VA grade