• Part: M12L64164A-7BG2M
  • Description: 1M x 16 Bit x 4 Banks Synchronous DRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.22 MB
Download M12L64164A-7BG2M Datasheet PDF
Elite Semiconductor Microelectronics Technology
M12L64164A-7BG2M
M12L64164A-7BG2M is 1M x 16 Bit x 4 Banks Synchronous DRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M12L64164A-5TG2M comparator family.
ESMT SDRAM Features y JEDEC standard 3.3V power supply y LVTTL patible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) y All inputs are sampled at the positive going edge of the system clock y DQM for masking y Auto & self refresh y 64ms refresh period (4K cycle) - 15.6 μ s refresh interval M12L64164A (2M) 1M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID Max Freq. Package ments M12L64164A-5TG2M 200MHz 54 TSOP II Pb-free M12L64164A-6TG2M 166MHz 54 TSOP II Pb-free M12L64164A-7TG2M 143MHz M12L64164A-5BG2M 200MHz...