M12L64164A-7BG2Y Datasheet 1m X 16 Bit X 4 Banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	M12L64164A-7BG2Y
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	1.22 MB
Description	1M x 16 Bit x 4 Banks Synchronous DRAM
Datasheet	M12L64164A-7BG2Y M12L64164A-5TG2Y Datasheet (PDF)

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

Synchronous design allows precise cycle controls wit

y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) y All inputs are sampled at the positive going edge of the system clock y DQM for masking y Auto & self refresh y 64ms refresh period (4K cycle) - 15.6 μ s refresh interval M12L64164A (2Y) 1M x 16 Bit x 4 Banks Synchronous DRAM.

Part Number	Description
M12L64164A-7BG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7BG2M	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7TG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7TG2M	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-7TG2Y	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2M	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2Y	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2M	1M x 16 Bit x 4 Banks Synchronous DRAM