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M14D128168A-1.6BG2Y

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M14D128168A-1.6BG2Y datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M14D128168A-1.6BG2Y datasheet preview

M14D128168A-1.6BG2Y Datasheet Details

Part number M14D128168A-1.6BG2Y
Datasheet M14D128168A-1.6BG2Y M14D128168A Datasheet (PDF)
File Size 1.63 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 2M x 16 Bit x 4 Banks DDR II SDRAM
M14D128168A-1.6BG2Y page 2 M14D128168A-1.6BG2Y page 3

M14D128168A-1.6BG2Y Overview

Pin Name A0~A12, BA0,BA1 DQ0~DQ15 RAS CAS WE VSS VDD DQS, DQS (LDQS, LDQS UDQS, UDQS ) ODT NC Function Address inputs - Row address A0~A11 - Column address A0~A8 A12: use for MRS/EMRS.

M14D128168A-1.6BG2Y Key Features

  • JEDEC Standard
  • VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V
  • Internal pipelined double-data-rate architecture; two data access per clock cycle
  • Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation
  • On-chip DLL
  • Differential clock inputs (CLK and CLK )
  • DLL aligns DQ and DQS transition with CLK transition
  • 1KB page size
  • Row address: A0 to A11
  • Column address: A0 to A8
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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M14D128168A-1.6BG2Y Distributor

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