• Part: M14D2561616A-1.5BG2S
  • Description: 4M x 16 Bit x 4 Banks DDR II SDRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.57 MB
Download M14D2561616A-1.5BG2S Datasheet PDF
Elite Semiconductor Microelectronics Technology
M14D2561616A-1.5BG2S
M14D2561616A-1.5BG2S is 4M x 16 Bit x 4 Banks DDR II SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M14D2561616A comparator family.
ESMT DDR II SDRAM M14D2561616A (2S) 4M x 16 Bit x 4 Banks DDR II SDRAM Features - JEDEC Standard - VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V - Internal pipelined double-data-rate architecture; two data access per clock cycle - Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. - On-chip DLL - Differential clock inputs (CLK and CLK ) - DLL aligns DQ and DQS transition with CLK transition - 1KB page size - Row address: A0 to A12 - Column address: A0 to A8 - Quad bank operation - CAS Latency : 3, 4, 5, 6, 7, 8, 9 - Additive Latency: 0, 1, 2, 3, 4, 5, 6, 7 - Burst Type : Sequential and Interleave - Burst Length : 4, 8 - All inputs...