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M14D2561616A-1.5BG2C Datasheet

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M14D2561616A-1.5BG2C datasheet preview

Datasheet Details

Part number	M14D2561616A-1.5BG2C
Datasheet	M14D2561616A-1.5BG2C-ESMT.pdf
File Size	1.56 MB
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
Description	4M x 16 Bit x 4 Banks DDR II SDRAM

M14D2561616A-1.5BG2C Overview

Auto Precharge BA0, BA1 : Bank selects (4 Banks) Data-in/Data-out mand input mand input mand input Ground Power Bi-directional.

M14D2561616A-1.5BG2C Key Features

JEDEC Standard
VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V
Internal pipelined double-data-rate architecture; two data access per clock cycle
Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation
On-chip DLL
Differential clock inputs (CLK and CLK )
DLL aligns DQ and DQS transition with CLK transition
1KB page size
Row address: A0 to A12
Column address: A0 to A8

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

See all ESMT (Elite Semiconductor Microelectronics Technology) datasheets

Part Number	Description
M14D2561616A-1.5BG2S	4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-1.5BIG2C	DDR II SDRAM
M14D2561616A-1.8BBG2S	4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-1.8BG2C	4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-1.8BG2S	4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-1.8BIG2C	DDR II SDRAM
M14D2561616A-2.5BBG2S	4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-2.5BG2C	4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-2.5BG2S	4M x 16 Bit x 4 Banks DDR II SDRAM
M14D2561616A-2.5BIG2C	DDR II SDRAM

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