M53D64164A-5BG2C

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M53D64164A-5BG2C datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M53D64164A-5BG2C Datasheet Details

Part number	M53D64164A-5BG2C
Datasheet	M53D64164A-5BG2C M53D64164A Datasheet (PDF)
File Size	1.18 MB
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
Description	1M x16 Bit x 4 Banks Mobile DDR SDRAM

M53D64164A-5BG2C Overview

Ball Name Function A0~A11, BA0~BA1 Address inputs - Row address A0~A11 - Column address A0~ A7 A10/AP : Bank selects (4 Banks) DQ0~DQ15 Data-in/Data-out RAS CAS WE VSS VDD LDQS, UDQS Row address strobe Column address strobe Write enable Ground Power Bi-directional Data Strobe. LDQS corresponds to the data on DQ0~DQ7;.

M53D64164A-5BG2C Key Features

DS (Drive Strength)
Deep Power Down Mode (DPD Mode)
Row address A0~A11
Column address A0~ A7 A10/AP : AUTO Precharge BA0~BA1 : Bank selects (4 Banks)

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M53D64164A-5BG2C Datasheet Details

M53D64164A-5BG2C Overview

M53D64164A-5BG2C Key Features

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

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