2N5219
2N5219 is NPN SILICON ANNULAR TRANSISTOR manufactured by Unknown Manufacturer.
2N5219 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
- .. designed for general-purpose amplifier applications.
- Low Collector-Emitter Saturation Voltage VCE(sat): 0.4 Vdc (Max) @ IC: 10 m Ade
- High Current-Gain-Bandwidth Product f T: 150 MHz (Min) @ IC: 10 m Ade
- Low Collector-Base Capacitance Ccb: 4.0 p F (Max)@ VCE: 10 Vdc
NPN SILICON AMPLIFIER TRANSISTOR
- MAXIMUM RATINGS Rating
Coliector~Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Callector Current
- Continuous Total Power Dissipation @ T A = 25°C
Derate above 2So C Total Power Dissipation @ TC == 2So C
Derate above 2So C
Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB
Po
Po
TJ,Tstg
Value 15
20 3.0 100 350 2.8 1.0 8.0 -55 to +150
Unit
Vdc Vdc Vdc m Ade m W m W/o C
Watt m W/o C
°c
"THERMAL CHARACTERISTICS Character istic
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Symbol...
