Datasheet Summary
2N5226 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
... designed for general purpose amplifier applications and for plementary circuitry with the 2N5225.
- Collector- Emitter Breakdown Voltage
- BVCEO = 25 Volts (Min) @ IC = 10 mAdc
- Current Gain Specified at lOrnA and 50 rnA
- Coli ector- Base Capacitance
- Ccb = 20 pF (Max) @ VCB = 5.0 Vdc
PNP SILICON AMPLIFIER TRANSISTOR
'MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage EmItter-Base Voltage
Collector Current
- Continuous
Total Power Dissipation @ T A = 2SoC Derate above 25°C
Total Power Dlssipation@Tc'" 25°C Derate above 25°C
Operating and Storage JunctIon Temperature Range
Symbol VCEO VCB VEB
Po
Po
T J,T...