2N5798
2N5798 is SILICON P-CHANNEL JUNCTION FET manufactured by Unknown Manufacturer.
- Part of the 2N5797 comparator family.
- Part of the 2N5797 comparator family.
2N5797 (SILICON) thru
2N5800
SILICON P- CHANNEL JUNCTION FIELD- EFFECT TRANSISTORS
Symmetrical depletion mode Junction Field- Effect Transistors de- signed primarily for low-power, audio amplifier applications.
- Low Reverse Transfer Capacitance Crss = 1.0 p F (Maxi
- Drain and Source Interchangeable
- Low Gate Reverse Current
- IGSS = 1.0 n Adc (Maxi
- Unibloc Plastic Package Encapsulation
P- CHANNEL JUNCTION FIELD- EFFECT
TRANSISTORS
- MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2So C
Derate above 25°C Operating and Storage Junction
Temperature Range
"'Indicates JEDEC Registered Data.
Symbol VOS VOG VGSR IGF
Po
TJ,Ts Ig
Value 40 40 40 10 350 2.8
-651o +150
Unit Vdc Vdc Vdc m Ade m W m W/o C
°c
U'PLA~NEH",r~-~ 01
PIN 1 SOURCE D--'-Illl!ltt
2 ORAIN
~V- ,3 GATE
E, M r-'" 0
G JI
DIM C...
