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2N5799 - SILICON P-CHANNEL JUNCTION FET

This page provides the datasheet information for the 2N5799, a member of the 2N5797 SILICON P-CHANNEL JUNCTION FET family.

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Datasheet Details

Part number 2N5799
Manufacturer ETC
File Size 211.54 KB
Description SILICON P-CHANNEL JUNCTION FET
Datasheet download datasheet 2N5799 Datasheet
Additional preview pages of the 2N5799 datasheet.

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Full PDF Text Transcription

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2N5797 (SILICON) thru 2N5800 SILICON P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Symmetrical depletion mode Junction Field·Effect Transistors de· signed primarily for low-power, audio amplifier applications. • Low Reverse Transfer Capacitance Crss = 1.0 pF (Maxi • Drain and Source Interchangeable • Low Gate Reverse Current - IGSS = 1.0 nAdc (Maxi • Unibloc Plastic Package Encapsulation P·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS *MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation @TC"" 2SoC Derate above 25°C Operating and Storage Junction Temperature Range "'Indicates JEDEC Registered Data. Symbol VOS VOG VGSR IGF Po TJ,TsIg Value 40 40 40 10 350 2.
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