BUZ20LF Description
The BUZ20LF provide the designer with the best bination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness. Drain-source V(BR)DSS Breakdown Voltage ID=250µA,VGS=0V 100 IDSS Zero Gate Voltage Drain Current (VGS=0) VDS= Max Rating VDS= Max Rating,TC=125℃ IGSS Gate-body Leakage Current (VGS=0) VGS=±20V Typ. 25 250 ±100 ℃/W ℃/W ℃ Unit A mJ Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on)...