FEATURES
Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 12/15/20/25 ns (Commercial) – 20/25/35ns (P4C1682 Military) Low Power Operation (Commercial) – 715 mW Active – 12, 15 – 550 mW Active – 20/25/35 – 193 mW Standby (TTL Input) – 83 mW Standby (CMOS Input) Single 5V ± 10%Power Supply Separate Inputs and Outputs – P4C1681 Input Data at Outputs during Write – P4C1682 Outputs in High Z during Write Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 24-Pin 300 mil DIP – 24-Pin 300 mil SOIC – 24-Pin 300 mil SOJ – 24-Pin CERDIP – 28-Pin LCC (450 mil x 450 mil) DESCRIPTION
The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra high speed static RAMs similar to the P4C168, but with separate data I/O pins. The P4C1681 features a transparent write operation; the outputs of All devices have low power standby modes. Access times as fast as 12 nanoseconds are available, permitting greatly enhanced system operating speeds. CMOS is used to reduce power consumption to a low 715 mW active, 193 mW standby. levels.
