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SHF-0589 - 0.05-3 GHz/ 2 Watt GaAs HFET

Datasheet Summary

Description

Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.

The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Features

  • High Linearity Performance at 1.96 GHz Gmax S 21 Gai n OIP3 P 1dB PCHAN NF IDSS gm VP Maxi mum Avai lable Gai n Inserti on Gai n Power Gai n [1] M M E [2] Output Thi rd Order Intercept Poi nt Output 1dB C ompressi on Poi nt [2] IS-95 C hannel Power (-45dBc AC PR) Saturated D rai n C urrent Tranconductance C O Noi se Fi gure [2] BVGS R E Pi nch-Off Voltage [1] [1] Gate-Source Breakdown Voltage [1] BVGD Rth V DS IDQ Gate-D rai n Breakdown Voltage Thermal Resi stance [3].

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Datasheet Details

Part number SHF-0589
Manufacturer ETC
File Size 195.36 KB
Description 0.05-3 GHz/ 2 Watt GaAs HFET
Datasheet download datasheet SHF-0589 Datasheet
Additional preview pages of the SHF-0589 datasheet.

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Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression is +33.4 dBm when biased for Class AB operation at 7V,345mA at 1.96 GHz. The +46.5 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.
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