AO4840 Datasheet | EVVO

Features - Trench FET® power MOSFET - 100 % R g and UIS tested Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 7A < 19mΩ < 23mΩ Dual N-Channel 60 V (D-S) MOSFET D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 m H TC = 25 °C TC = 125 °C VDS VGS IS IDM IAS EAS TJ, Tstg LIMIT 60 ± 20 7 4 3.6 28 18 16.2 4 1.3 -55 to +175 THERMAL RESISTANCE RATING S PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). SYMBOL Rth JA Rth...