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AO4840 - Dual 40V N-ChanneI MOSFET

General Description

SOURCE GATE DRAIN D1 S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 Top View G1 S1 N-Channel D2 G2 S2 N-Channel 3.Absolute Maximum Ratings TC= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Si

Key Features

  • VDS (V)=40V ID=7A(VGS=10V) RDS(ON).

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Datasheet Details

Part number AO4840
Manufacturer UMW
File Size 208.92 KB
Description Dual 40V N-ChanneI MOSFET
Datasheet download datasheet AO4840 Datasheet

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UMW AO4840 Dual 40V N-ChanneI MOSFET 1.Features VDS (V)=40V ID=7A(VGS=10V) RDS(ON)<0.028Ω(VGS=10V) RDS(ON)<0.03Ω(VGS=4.5V) TrenchFET® power MOSFET 100 % Rg and UIS tested 2.Pinning information Pin 1,3 2,4 5,6,7,8 Symbol S2,S1 G2,G1 D2,D1 Description SOURCE GATE DRAIN D1 S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 Top View G1 S1 N-Channel D2 G2 S2 N-Channel 3.Absolute Maximum Ratings TC= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Storage Temperature TC=25°C TC=125°C L=0.1mH TC=25°C TC=125°C Symbol VDS VGS ID IS IDM IAS EAS PD TJ, TSTG Rating 40 ±20 7 4 3.6 28 18 16.2 4 1.