The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
UMW AO4840
Dual 40V N-ChanneI MOSFET
1.Features
VDS (V)=40V ID=7A(VGS=10V) RDS(ON)<0.028Ω(VGS=10V) RDS(ON)<0.03Ω(VGS=4.5V)
TrenchFET® power MOSFET 100 % Rg and UIS tested
2.Pinning information
Pin 1,3 2,4 5,6,7,8
Symbol S2,S1 G2,G1 D2,D1
Description SOURCE GATE DRAIN
D1
S2 1 G2 2 S1 3 G1 4
8 D2 7 D2 6 D1 5 D1
Top View
G1 S1
N-Channel
D2
G2 S2
N-Channel
3.Absolute Maximum Ratings TC= 25°C
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Storage Temperature
TC=25°C TC=125°C
L=0.1mH TC=25°C TC=125°C
Symbol VDS VGS
ID
IS IDM IAS EAS
PD
TJ, TSTG
Rating 40 ±20 7 4 3.6 28 18 16.2 4 1.