Datasheet Summary
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined.
F50L1G41A (2Y)
3.3V 1 Gbit SPI-NAND Flash Memory
Values 3.3V x1, x21, x4 104MHz
1-bit 9.6ns 104MT/s 1ms (maximum value) 1ms (maximum value)
Features z Voltage Supply: 3.3V (2.7V~3.6V) z Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit z Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte z Page Read Operation
- Page Size: (2K + 64) Byte
- Read from Cell to Register with Internal ECC: 100us z Memory Cell: 1bit/Memory...
