EBE11UD8AGWA Datasheet | Elpida Memory

PRELIMINARY DATA SHEET .. 1GB Unbuffered DDR2 SDRAM DIMM EBE11UD8AGWA (128M words × 64 bits, 2 Ranks) Specifications - Density: 1GB - Organization  128M words × 64 bits, 2 ranks - Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA - Package: 240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free (Ro HS pliant) - Power supply: VDD = 1.8V ± 0.1V - Data rate: 667Mbps/533Mbps (max.) - Four internal banks for concurrent operation (ponents) - Interface: SSTL_18 - Burst lengths (BL): 4, 8 - /CAS Latency (CL): 3, 4, 5 - Precharge: auto precharge option for each burst access - Refresh: auto-refresh, self-refresh - Refresh cycles: 8192 cycles/64ms  Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at +85°C < TC ≤ +95°C - Operating case temperature range  TC = 0°C to +95°C Features - Double-data-rate architecture; two data transfers per clock cycle - The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture - Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver - DQS is edge-aligned with data for READs; centeraligned with data for WRITEs - Differential clock inputs (CK and /CK) - DLL aligns DQ and DQS transitions with CK transitions - mands entered on each positive CK edge; data and data mask referenced to both edges of DQS - Data mask (DM) for write data - Posted /CAS by programmable additive latency for better mand and data bus efficiency - Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal...