Datasheet Details
| Part number | EDE1104AASE |
|---|---|
| Manufacturer | Elpida Memory |
| File Size | 693.73 KB |
| Description | (EDE1104AASE / EDE1108AASE) 1G bits DDR2 SDRAM organized |
| Datasheet |
 EDE1104AASE Datasheet
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General Description
The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks.
The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks.
They are packaged in 68-ball FBGA (µBGA) package.
Key Features
- Power supply: VDD, VDDQ = 1.8V ± 0.1V.
- Double-data-rate architecture: two data transfers per clock cycle.
- Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
- DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
- Differential clock inputs (CK and /CK).
- DLL aligns DQ and DQS transitions with CK transitions.
- Commands entered on e.