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EN29LV320A - 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory

General Description

The EN29LV320A is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 4,194,304 bytes or 2.097,152 words.

Any word can be programmed typically in 8µs.

Key Features

  • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations.
  • High performance - Access times as fast as 70 ns.
  • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 μA current in standby or automatic sleep mode.
  • Standard DATA# polling and toggle bits feature.
  • Unlock Bypass Program command supported.
  • Erase Suspend / Resume mod.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
EN29LV320 32M Flash Memory Boot Sector Flash Memory
EN29LV010 CMOS 3.0 Volt-only Flash Memory
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EN29LV160 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV160A 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EN29LV320A EN29LV320A 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 μA current in standby or automatic sleep mode. • Standard DATA# polling and toggle bits feature • Unlock Bypass Program command supported • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • Support JEDEC Common Flash Interface (CFI). • Low Vcc write inhibit < 2.5V • Minimum 100K program/erase endurance cycles.