Datasheet Summary
eorex
64Mb (1M×4Bank×16) Synchronous DRAM
Features
- Fully Synchronous to Positive Clock Edge
- Single 3.3V ±0.3V Power Supply
- LVTTL patible with Multiplexed Address
- Programmable Burst Length (B/L)
- 1, 2, 4, 8 or Full Page
- Programmable CAS Latency (C/L)
- 2 or 3
- Data Mask (DQM) for Read / Write Masking
- Programmable Wrap Sequence
- Sequential (B/L = 1/2/4/8/full Page)
- Interleave (B/L = 1/2/4/8)
- Burst Read with Single-bit Write Operation
- All Inputs are Sampled at the Rising Edge of the System Clock
- Auto Refresh and Self Refresh
- 4,096 Refresh Cycles / 64ms (15.625us)
Description
The EM484M1644VTC is Synchronous Dynamic Random Access Memory (SDRAM)...