Datasheet4U Logo Datasheet4U.com

EM484M1644VTC - 64Mb (1M x 4Bank x 16) Synchronous DRAM

Description

The EM484M1644VTC is Synchronous Dynamic Random Access Memory (SDRAM) organized as 1Meg words x 4 banks by 16 bits.

All inputs and outputs are synchronized with the positive edge of the clock.

Features

  • Fully Synchronous to Positive Clock Edge.
  • Single 3.3V ±0.3V Power Supply.
  • LVTTL Compatible with Multiplexed Address.
  • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page.
  • Programmable CAS Latency (C/L) - 2 or 3.
  • Data Mask (DQM) for Read / Write Masking.
  • Programmable Wrap Sequence.
  • Sequential (B/L = 1/2/4/8/full Page).
  • Interleave (B/L = 1/2/4/8).
  • Burst Read with Single-bit Write Operation.
  • All.

📥 Download Datasheet

Datasheet preview – EM484M1644VTC

Datasheet Details

Part number EM484M1644VTC
Manufacturer Eorex
File Size 191.10 KB
Description 64Mb (1M x 4Bank x 16) Synchronous DRAM
Datasheet download datasheet EM484M1644VTC Datasheet
Additional preview pages of the EM484M1644VTC datasheet.

📁 Similar Datasheet

  • EM4 - Electronic Indicator (ETC)
  • EM4 - Tube (ETC)
  • EM4 - Tuning Indicator (Philips)
  • EM4022 - Multi Frequency Contactless Identification Device Anti-Collision compatible (EM Microelectronic - MARIN SA)
  • EM4025 - Read Only Contactless Identification Device with Anticollision (EM Microelectronic - MARIN SA)
  • EM4026 - Read only Contactless Identification Device (EM Microelectronic - MARIN SA)
  • EM4033 - 64-bit Read Only CMOS (EM Microelectronic)
  • EM4034 - 13.56MHz ISO15693 Standard Compliant Contactless RW Identification Device (EM Microelectronic - MARIN SA)
  • EM4035 - 13.56MHz CRYPTO ISO15693 Compliant Contactless Identification Device (EM Microelectronic - MARIN SA)
  • EM4069 - 128-bit Read/Write Contactless Identification (EM Microelectronic)
Other Datasheets by Eorex

Full PDF Text Transcription

Click to expand full text
eorex EM484M1644VTC 64Mb (1M×4Bank×16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 or 3 • Data Mask (DQM) for Read / Write Masking • Programmable Wrap Sequence – Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) • Burst Read with Single-bit Write Operation • All Inputs are Sampled at the Rising Edge of the System Clock • Auto Refresh and Self Refresh • 4,096 Refresh Cycles / 64ms (15.625us) Description The EM484M1644VTC is Synchronous Dynamic Random Access Memory (SDRAM) organized as 1Meg words x 4 banks by 16 bits.
Published: |