EM484M1644VTD Datasheet | Eorex

eorex 64Mb (1M4Bank16) Synchronous DRAM Features - Fully Synchronous to Positive Clock Edge - Single 3.3V 0.3V Power Supply - LVTTL patible with Multiplexed Address - Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page - Programmable CAS Latency (C/L) - 2 or 3 - Data Mask (DQM) for Read / Write Masking - Programmable Wrap Sequence - Sequential (B/L = 1/2/4/8/full Page) - Interleave (B/L = 1/2/4/8) - Burst Read with Single-bit Write Operation - All Inputs are Sampled at the Rising Edge of the System Clock - Auto Refresh and Self Refresh - 4,096 Refresh Cycles / 64ms (15.625us) Description The EM484M1644VTD is Synchronous Dynamic Random Access Memory (SDRAM)...