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EM48BM1684LBA - 512Mb Synchronous DRAM

Description

Fully Synchronous to Positive Clock Edge VDD= 1.8V +/- 0.1V for 133MHz Power Supply VDD= 1.85V+/- 0.1V for 166MHz LVCMOS Compatible with Multiplexed Address Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page Programmable CAS Latency (C/L) - 2

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Datasheet Details

Part number EM48BM1684LBA
Manufacturer Eorex
File Size 285.90 KB
Description 512Mb Synchronous DRAM
Datasheet download datasheet EM48BM1684LBA Datasheet

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Full PDF Text Transcription

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eorex Revision History Revision 0.1 (May. 2007) - First release. Revision 0.2 (May. 2008).. - change package out-line spec : from 12.5mm x 10.0mm to 12.0mm x 10.0mm Revision 0.3 (Aug. 2008).. - change ICC spec : ICC2N : 12 MA ICC2Ns. : 5 MA ICC3P : 2 MA ICC3Ps. : 1 MA ICC3N : 15 MA ICC5 : 120 MA Revision 0.4 (May. 2009).. - Add -6 Speed product EM48BM1684LBA May. 2009 www.eorex.com 1/21 eorex EM48BM1684LBA 512Mb (8M×4Bank×16) Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • VDD= 1.8V +/- 0.1V for 133MHz Power Supply VDD= 1.85V+/- 0.
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