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EM48BM1684LBA Datasheet 512Mb Synchronous DRAM

Manufacturer: Eorex

General Description

• Fully Synchronous to Positive Clock Edge • VDD= 1.8V +/- 0.1V for 133MHz Power Supply VDD= 1.85V+/- 0.1V for 166MHz • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) - 2 or 3 • Data Mask (DQM) for Read / Write Masking • Programmable Wrap Sequence – Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) • Burst Read with Single-bit Write Operation • All Inputs are Sampled at the Rising Edge of th

Overview

eorex Revision History Revision 0.1 (May.

2007) - First release.

Revision 0.2 (May.