EM48BM1684LBA Overview
Description
Fully Synchronous to Positive Clock Edge - VDD= 1.8V +/- 0.1V for 133MHz Power Supply VDD= 1.85V+/- 0.1V for 166MHz - LVCMOS Compatible with Multiplexed Address - Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page - Programmable CAS Latency (C/L) - 2 or 3 - Data Mask (DQM) for Read / Write Masking - Programmable Wrap Sequence – Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) - Burst Read with Single-bit Write Operation - All Inputs are Sampled at the Rising Edge of th.
