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EM63B165TS - 32M x 16 bit Synchronous DRAM

Features

  • Fast access time from clock: 4.5/5/5.4 ns.
  • Fast clock rate: 200/166/143 MHz.
  • Fully synchronous operation.
  • Internal pipelined architecture.
  • 8M word x 16-bit x 4-bank.
  • Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function.
  • Auto Refresh and Self Refresh.
  • 8192 refresh cycles/64ms.
  • CKE power down mode.
  • Single +3.3V ±0.3V power supply.
  • Operating Tem.

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Datasheet preview – EM63B165TS

Datasheet Details

Part number EM63B165TS
Manufacturer Etron Technology
File Size 1.34 MB
Description 32M x 16 bit Synchronous DRAM
Datasheet download datasheet EM63B165TS Datasheet
Additional preview pages of the EM63B165TS datasheet.

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Full PDF Text Transcription

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EtronTech EM63B165TS 32M x 16 bit Synchronous DRAM (SDRAM) Advance (Rev. 2.0, Feb. /2016) Features  Fast access time from clock: 4.5/5/5.4 ns  Fast clock rate: 200/166/143 MHz  Fully synchronous operation  Internal pipelined architecture  8M word x 16-bit x 4-bank  Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function  Auto Refresh and Self Refresh  8192 refresh cycles/64ms  CKE power down mode  Single +3.3V ±0.3V power supply  Operating Temperature: TA = 0~70°C  Interface: LVTTL  54-pin 400 mil plastic TSOP II package - Pb free and Halogen free Overview The EM63B165 SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits.
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