EM6A8160TSA - 4M x 16 DDR Synchronous DRAM

Product Overview

Etron Technology

Part number	EM6A8160TSA
Manufacturer	Etron Technology
File Size	402.78 KB
Description	4M x 16 DDR Synchronous DRAM
Datasheet	EM6A8160TSA Datasheet
Additional preview pages of the EM6A8160TSA datasheet.

Fast clock rate: 200MHz.
Differential Clock CK & CK.
Bi-directional DQS.
DLL enable/disable by EMRS.
Fully synchronous operation.
Internal pipeline architecture.
Four internal banks, 1M x 16-bit for each bank.
Programmable Mode and Extended Mode Registers - CAS Latency: 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved.
Individual byte writes mask control.
DM Write Latency = 0.
Auto.

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Published: Dec 21, 2016 |