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EM636165 - 1M x 16 Synchronous DRAM

This page provides the datasheet information for the EM636165, a member of the EM636165GD 1M x 16 Synchronous DRAM family.

Features

  • Key Specifications.
  • Fast access time: 5/5.5 ns.
  • Fast clock rate: 166/143 MHz.
  • Self refresh mode: standard and low power.
  • Internal pipelined architecture.
  • 512K word x 16-bit x 2-bank.
  • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function.
  • Individual byte controlled by LDQM and UDQM.
  • Auto Refresh and Self Refresh.

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Datasheet preview – EM636165

Datasheet Details

Part number EM636165
Manufacturer Etron
File Size 628.25 KB
Description 1M x 16 Synchronous DRAM
Datasheet download datasheet EM636165 Datasheet
Additional preview pages of the EM636165 datasheet.

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    Full PDF Text Transcription

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    EtronTech EM636165 1Mega x 16 Synchronous DRAM (SDRAM) (Rev. 1.0, 10/2004) Features Key Specifications • Fast access time: 5/5.5 ns • Fast clock rate: 166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank • Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function • Individual byte controlled by LDQM and UDQM • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Single +3.3V±0.3V power supply • Interface: LVTTL • Component Type : Known Good Die EM636165 - 6/7/7L tCK3 tRAS tAC3 tRC Clock Cycle time(min.) Row Active time(max.) Access time from CLK(max.) Row Cycle time(min.
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