EIC1010-25 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - 10.0 - 10.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44 d Bm Output Power at 1d B pression 7 d B Power Gain at 1d B pression 33% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics 0.024 0.580 YYWW 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IDSS VP RTH 1. Caution! ESD sensitive device. MIN 43 6.5 PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000m A Gain at 1d B pression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000m A Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000m A Power Added Efficiency at 1d B pression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 4000m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance 44 7 UNITS d Bm d B ±0.6 33 6500 11 -2.5 1.4 7200 16 -4.0 1.8 o d B % m A A V C/W f = 10.0-10.25GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 m A 2. Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 105m A and -10.5m A respectively Overall Rth depends on case mounting. MAXIMUM RATING AT 25°C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 38.5 d Bm 175 C -65 to +175 C 83W o o CONTINUOUS2 10V -4V @ 3d B pression 175 o C -65 to +175 o C 83W Vds Vgs Pin Tch Tstg Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: .excelics. page 1 of 4 Revision 01 .. 10.0-10.25 GHz 25-Watt Internally Matched Power FET 10 5 0 d B(S(1,2)) d B(S(2,1)) S(2,2) S(1,1) -5 -10 -15 -20 9.7...