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EIC1010-8 - Internally Matched Power FET

Key Features

  • 10.00.
  • 10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH YM SN.

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Datasheet Details

Part number EIC1010-8
Manufacturer Excelics Semiconductor
File Size 116.99 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1010-8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1010-8 UPDATED 02/15/2005 10.00-10.70 GHz 8-Watt Internally Matched Power FET Excelics EIC1010-8 FEATURES • • • • • • • • 10.00– 10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH YM SN ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 38.5 6.0 TYP 39.5 7.0 ±0.6 31 2300 -43 -46 4000 -2.5 3.5 3) Overall Rth depends on case mounting. PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.00-10.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 10.00-10.