EIC1010A-12 Datasheet | Excelics Semiconductor

FEATURES - - - - - - 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5d Bm Output Power at 1d B pression 7.0 d B Power Gain at 1d B pression 30% Power Added Efficiency Hermetic Metal Flange Package .827±.010 .669 .120 MIN .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200m A Gain at 1d B pression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200m A Gain Flatness f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200m A Power Added Efficiency at 1d B pression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200m A Drain Current at 1d B pression f = 10.0-10.25GHz Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 d Bm S.C.L Vds = 9 V, IDSQ ≈ 65% IDSS f = 10.25GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 39.5 6.0 40.5 7.0 UNITS d Bm d B ±0.5 30 3300 -40 -43 5800 -2.5 2.3 7200 -4.0 2.6 o d B % 3700 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 58 m A 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 130m A -21m A 40.0d Bm 175 C o -65 to +175 C o CONTINUOUS2 10V -4V 43m A -7m A @ 3d B pression 175 C -65 to +175 o C 57W o Vds Vgs Igsf Igsr Pin Tch Tstg Pt 57W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax:...