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EIC1010A-12 - Internally Matched Power FET

Key Features

  • 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package EIC1010A-12 .827±.010 .669 .120 MIN .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

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Datasheet Details

Part number EIC1010A-12
Manufacturer Excelics Semiconductor
File Size 115.84 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1010A-12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1010A-12 ISSUED: 07/24/2007 10.0-10.25 GHz 12-Watt Internally Matched Power FET Excelics FEATURES • • • • • • 10.0-10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package EIC1010A-12 .827±.010 .669 .120 MIN .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.0-10.25GHz VDS = 9 V, IDSQ ≈ 3200mA Gain Flatness f = 10.0-10.