EIC1010A-8 Datasheet | Excelics Semiconductor

FEATURES - - - - - - - - 10.00- 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 d Bm Output Power at 1d B pression 7.0 d B Power Gain at 1d B pression 31% Power Added Efficiency -46 d Bc IM3 at Po = 28 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200m A Gain Flatness f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200m A Drain Current at 1d B pression f = 10.00-10.25GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28 d Bm S.C.L2 VDS = 9 V, IDSQ ≈ 65% IDSS f = 10.25 GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 38.0 6.5 39.0 7.5 UNITS d Bm d B ±0.5 31 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o d B % 2600 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1.) Tested with 100 Ohm gate resistor. 2.) S.C.L. = Single Carrier Level. 3.) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG 1,2 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature VALUE 10 V -4.5 V IDSS 80 m A @ 3d B pression 38 W 175°C -65/+175°C Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH - TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS - IDS) - (POUT - PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868...