EIC1010A-8 - Internally Matched Power FET

Excelics Semiconductor

Key Features

10.00.
10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH.

EIC1010A-8 internally matched power fet by Excelics Semiconductor - Datasheet Preview

Datasheet Details

Part number	EIC1010A-8
Manufacturer	Excelics Semiconductor
File Size	187.22 KB
Description	Internally Matched Power FET
Datasheet	EIC1010A-8 Datasheet

Other Datasheets by Excelics Semiconductor

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EIC1010-4	Internally Matched Power FET
EIC1010-8	Internally Matched Power FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1010A-8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • • 10.00– 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at Po = 28 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200mA Gain Flatness f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 10.00-10.