Datasheet4U Logo Datasheet4U.com

EIC1011-12 - Internally Matched Power FET

Key Features

  • 10.7.
  • 11.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH.

📥 Download Datasheet

Datasheet Details

Part number EIC1011-12
Manufacturer Excelics Semiconductor
File Size 125.44 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1011-12 Datasheet

Other Datasheets by Excelics Semiconductor

Part Number Description
EIC1011-4 Internally Matched Power FET
EIC1011-8 Internally Matched Power FET
EIC1010-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET
EIC1010-4 Internally Matched Power FET
EIC1010-8 Internally Matched Power FET
EIC1010A-12 Internally Matched Power FET
EIC1010A-20 Internally Matched Power FET
EIC1010A-8 Internally Matched Power FET
EIC1112-5 Internally Matched Power FET
EIC1112-8 Internally Matched Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com EIC1011-12 UPDATED 07/25/2007 10.7-11.7 GHz 12-Watt Internally Matched Power FET FEATURES • • • • • • • 10.7–11.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 10.7-11.