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EIC1011-4
UPDATED 08/21/2007
10.70-11.70GHz 4-Watt Internally-Matched Power FET
FEATURES
• • • • • • • 10.70 –11.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 10.7-11.
EIC1011-4 Datasheet
