EID1515-10 - 15.35-15.75 GHz 10-Watt Internally Matched Power FET
Excelics Semiconductor
Key Features
15.35.
15.75GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 20% Power Added Efficiency Hermetic Metal Flange Package
.827±.010 .669
.120 MIN
EID1515-10
YYWW
SN .120 MIN
.024 .421
.125 .508±.008 .442 .168±.010
ALL.
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
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EID1515-10
UPDATED 12/21/2006
15.35-15.75 GHz 10-Watt Internally Matched Power FET
Excelics
FEATURES
• • • • • • 15.35– 15.75GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 20% Power Added Efficiency Hermetic Metal Flange Package
.827±.010 .669
.120 MIN
EID1515-10
YYWW
SN .120 MIN
.024 .421
.125 .508±.008 .442 .168±.010
ALL DIMENSIONS IN INCHES
.004 .063 .004 .105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH
Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting.
Caution! ESD sensitive device. MIN
39.0 4.5
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 15.35-15.