EID8596A1-12 Overview
.. EID8596A1-12 UPDATED 07/12/2007 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB pression 9.0 dB Power Gain at 1dB pression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH The EID8596A1-12 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This...
EID8596A1-12 Key Features
- 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB pression 9.0 dB Power Gain at
- 9.60 GHz 12-Watt Internally-Matched Power FET