EMB06K03HP Datasheet | Excelliance MOS

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 6.5mΩ 11A 14A N-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 Power Dissipation TA = 25 °C TA = 100 °C L = 0.1m H L = 0.05m H TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ RJA when mounted on a 1 in2 pad of 2 oz copper. VGS ID IDM IAS EAS EAR PD Tj, Tstg TYPICAL LIMITS Q1 Q2 ±20 ±20...