EMB06K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB06K03HP
Manufacturer	Excelliance MOS
File Size	917.56 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB06K03HP Datasheet

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Other Datasheets by Excelliance MOS

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EMB06N03A	N-Channel Logic Level Enhancement Mode Field Effect Transistor
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EMB06N03H	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 BVDSS 30V 30V RDSON (MAX.) 9.5mΩ 6.5mΩ ID 11A 14A N-Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 Power Dissipation TA = 25 °C TA = 100 °C L = 0.1mH L = 0.05mH TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature.

Published: Apr 26, 2017 |