EMB07P03A - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB07P03A
Manufacturer	Excelliance MOS
File Size	189.71 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB07P03A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
EMB09P03A	P-Channel 30V MOSFET	VBsemi
EMB10	PNP Digital Transistors	Rohm
EMB10FHA	PNP -100mA -50V Complex Digital Transistors	ROHM
EMB11	Dual Digital Transistors	Rohm
EMB11	Dual Digital Transistors	JCET

Other Datasheets by Excelliance MOS

Part Number	Description
EMB07P03CS	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07P03G	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07P03V	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07B03H	Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07N03A	N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

EMB07P03A P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 7.5mΩ ID ‐80A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐35A, RG=25Ω Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg ±25 ‐80 ‐55 ‐160 ‐35 61.25 78 31 ‐55 to 150 100% UIS testing in condition of VD=‐15V, L=0.

Published: Apr 26, 2017 |