EMB07P03G - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB07P03G
Manufacturer	Excelliance MOS
File Size	182.26 KB
Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB07P03G Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB07P03A	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07P03CS	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07P03V	P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07B03H	Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB07N03A	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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EMB07P03G P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 7.5mΩ ID ‐15A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=‐25A, RG=25Ω Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg ±20 ‐15 ‐11 ‐60 ‐25 31.25 2.5 1.25 ‐55 to 150 100% UIS testing in condition of VD=‐15V, L=0.

Published: Apr 26, 2017 |