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EMB07P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30 V 7.8 mΩ 11.5 mΩ -68 A ID @TA=25℃ -13 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL

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Datasheet Details

Part number EMB07P03V
Manufacturer Excelliance MOS
File Size 337.00 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB07P03V Datasheet

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Full PDF Text Transcription

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EMB07P03V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30 V 7.8 mΩ 11.5 mΩ -68 A ID @TA=25℃ -13 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current1 TC = 25 °C TC = 100 °C ID -68 -43 Continuous Drain Current1 TA = 25 °C TA = 70 °C ID -13 -11 Pulsed Drain Current1 IDM -149 Avalanche Current IAS -51 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH EAS 130 L = 0.
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