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EMB07P03V Datasheet P-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer: Excelliance MOS

Datasheet Details

Part number EMB07P03V
Manufacturer Excelliance MOS
File Size 337.00 KB
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Download EMB07P03V Download (PDF)

General Description

: P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30 V 7.8 mΩ 11.5 mΩ -68 A ID @TA=25℃ -13 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current1 TC = 25 °C TC = 100 °C ID -68 -43 Continuous Drain Current1 TA = 25 °C TA = 70 °C ID -13 -11 Pulsed Drain Current1 IDM -149 Avalanche Current IAS -51 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH EAS 130 L = 0.05mH EAR 65 Power Dissipation1 TC = 25 °C TC = 100 °C PD 54 22 Power Dissipation1 TA = 25 °C TA = 70 °C PD 2.2 1.4 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=-31A, RG=25Ω, Rated VDS=-30V P-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC Junction-to-Ambient3 t≦10s Steady-State RθJA RθJA 1Pulse width limited by maximum junction temperature.

2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.

Copper, in a still air environment with TA =25°C.

Overview

EMB07P03V Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.