EMB07P03V Description
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMB07P03V is P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
| Part Number | Description |
|---|---|
| EMB07P03A | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07P03CS | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07P03G | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07B03H | Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB07N03A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.