Datasheet4U Logo Datasheet4U.com

EMB08K04HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number EMB08K04HP
Manufacturer Excelliance MOS
File Size 280.38 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMB08K04HP Datasheet

📁 Similar Datasheet

  • EMB09P03A - P-Channel 30V MOSFET (VBsemi)
  • EMB10 - PNP Digital Transistors (Rohm)
  • EMB10FHA - PNP -100mA -50V Complex Digital Transistors (ROHM)
  • EMB11 - Dual Digital Transistors (Rohm)
  • EMB11 - Dual Digital Transistors (JCET)
  • EMB1412 - EMB1412 MOSFET Gate Driver (Rev. B) (ETCTI)
  • EMB1428Q - EMB1428Q Switch Matrix Gate Driver (Rev. A) (ETCTI)
  • EMB1432Q - EMB1432Q 60-V 14-Channel Battery Stack Module Analog Front End (Rev. D) (ETCTI)
  • EMB1433Q - EMB1433Q 60-V 14-Channel Battery Stack Protection Chip with Programmable Window Comparator Supports Multi-Module Battery Packs (Rev. B) (ETCTI)
  • EMB1499Q - EMB1499Q Bidirectional Current DC-DC Controller (Rev. B) (ETCTI)
Other Datasheets by Excelliance MOS
  • EMB08K04G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB08N03A - MOSFET
  • EMB08N03V - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB08N06A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB08N06CS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB08N06H - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB08N06VS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 40V 40V D2 / S1 RDSON (MAX.) 17mΩ 8mΩ ID 41A 57A D1 UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free D1 D1 D1 PIN 1 (G1) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB08K04HP LIMITS UNIT Q1 Q2 Gate‐Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, RG=25Ω L = 0.
Published: |