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EMB08N03A - MOSFET

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Part number EMB08N03A
Manufacturer Excelliance MOS
File Size 229.46 KB
Description MOSFET
Datasheet download datasheet EMB08N03A Datasheet

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EMB08N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 8mΩ ID 55A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 55 ID TC = 100 °C 38 IDM 150 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH, ID=40A, RG=25Ω EAS 80 Repetitive Avalanche Energy2 L = 0.05mH EAR 40 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 50 20 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.
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