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EMB12N03VAT
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
11.5mΩ
ID
9A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
Bottom View
S
D
D
S
D
GD D
PIN 1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
LIMITS ±20 9 5.9 36 10 5 2.5 2.08 1.
EMB12N03VAT Datasheet
