EMBE0A10G Description
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width 300 sec, Duty Cycle 2％.
- Part: EMBE0A10G
- Manufacturer: Excelliance MOS
- Size: 189.95 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMBE0N10JS | MOSFET |
| EMBE0N10P | MOSFET |
| EMBE0N10Q | MOSFET |
| EMBE0N15A | MOSFET |
| EMB02K03HP | N-Channel Logic Level Enhancement Mode Field Effect Transistor |