EMBE0N10JS Datasheet | Excelliance MOS

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 500mΩ 0.9A UIS 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Ambient3 RJA (T ≤ 10sec) RJA (Steady State) 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 3The device mounted on a 1 in2 pad of 2 oz copper. TYPICAL LIMITS ±20 0.9 0.55 3.6 1.04 0.66 ‐55 to 150 UNIT V W °C MAXIMUM 83 120 UNIT °C / W 2015/10/19 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST...