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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
500mΩ
ID 2.1A G
UIS 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
VGS ID IDM
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
EMBE0N10Q
LIMITS ±20 2.1 1.4 8.4
6.25 2.5 ‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
EMBE0N10Q Datasheet
