Datasheet Details
| Part number | EMD04N10E |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 467.03 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD04N10E-ExcellianceMOS.pdf |
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Overview: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMD04N10E |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 467.03 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMD04N10E-ExcellianceMOS.pdf |
|
|
|
: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 4.5mΩ 6.0mΩ ID @TC=25℃ 171.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C TC = 100 °C ID Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 IAS L = 0.1mH EAS L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C PD Power Dissipation TA = 25 °C TA = 70 °C PD Operating Junction & Storage Temperature Range Tj, Tstg ▪100% UIS testing in condition of VD=50V, L=0.1mH, VG=10V, IL=60A, Rated VDS=100V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient3 RθJA 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test TYPICAL 2020/7/20 A.1 EMD04N10E LIMITS ±20 171 108 16 12 543 100 500.0 250.0 227.3 90.9 2 1.3 -55 to 150 UNIT V A mJ W W °C MAXIMUM 0.55 62.5 UNIT °C/W P.1 EMD04N10E ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source On-State Resistance1,4 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250uA 100 VDS = VGS, ID = 250uA 2 VDS = 0V, VGS = ±20V VDS = 80V, VGS = 0V VDS =70V, VGS =0V, TJ = 125 °C VDS = 10V, VGS = 10V 171 VGS = 10V, ID = 20A VGS = 7V, ID = 20A VDS = 5V, ID = 20A DYNAMIC Input Capacitance5 Output Capacitance5 Reverse Transfer Capacitance
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