EMF11N02J - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMF11N02J
Manufacturer	Excelliance MOS
File Size	213.63 KB
Description	MOSFET
Datasheet	EMF11N02J Datasheet
Additional preview pages of the EMF11N02J datasheet.

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Full PDF Text Transcription

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 11.5mΩ ID 8A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMF11N02J LIMITS ±12 8 6 32 1.25 0.8 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL MAXIMUM 100 UNIT °C / W 2016/8/25 p.

Published: Apr 26, 2017 |