EMF14N02VAT - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF14N02VAT
Manufacturer	Excelliance MOS
File Size	211.96 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF14N02VAT Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
EMF17	Power management	Rohm
EMF18	Power management (dual transistors)	Rohm
EMF19	Power management	Rohm
EMF20	Power management	Rohm
EMF21	Power management	Rohm

Other Datasheets by Excelliance MOS

Part Number	Description
EMF14N02A	N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMF14A02G	MOSFET
EMF14A02V	MOSFET
EMF11N02J	MOSFET
EMF16P01VAT	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

EMF14N02VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 14.8mΩ ID 8A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free Bottom View S D D S D GD D PIN 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg LIMITS ±12 8 6.2 32 10 5 2.5 2.08 1.