EMF14N02VAT - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMF14N02VAT
Manufacturer	Excelliance MOS
File Size	211.96 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMF14N02VAT Datasheet
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Full PDF Text Transcription

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EMF14N02VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V D RDSON (MAX.) 14.8mΩ ID 8A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free Bottom View S D D S D GD D PIN 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=10A, RG=25Ω L = 0.05mH Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg LIMITS ±12 8 6.2 32 10 5 2.5 2.08 1.

Published: Apr 26, 2017 |