EMF14N02A Datasheet | Excelliance MOS

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 20V RDSON (MAX.) 13.5mΩ 48A S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1m H Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg LIMITS ±12 48 20 140 33 54 50 20 ‐55 to 150 UNIT V A m J W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 375°C / W when mounted on a 1 in2 pad of 2 oz copper. 2014/11/25 TYPICAL MAXIMUM 2.5 75 UNIT °C / W p.1 ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER...